A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

E. N. Jin; L. Kornblum; D. P. Kumah; K. Zou; C. C. Broadbridge; J. H. Ngai; C. H. Ahn; F. J. Walker

doi:10.1063/1.4902433

APL Materials (Nov 2014)

A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

E. N. Jin,
L. Kornblum,
D. P. Kumah,
K. Zou,
C. C. Broadbridge,
J. H. Ngai,
C. H. Ahn,
F. J. Walker

Affiliations

E. N. Jin: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
L. Kornblum: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
D. P. Kumah: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
K. Zou: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
C. C. Broadbridge: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
J. H. Ngai: Department of Physics, The University of Texas at Arlington, Arlington, Texas 76019, USA
C. H. Ahn: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
F. J. Walker: Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA

DOI: https://doi.org/10.1063/1.4902433
Journal volume & issue: Vol. 2, no. 11
pp. 116109 – 116109-6

Abstract

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We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm−2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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