The Total Ionizing Dose Effects on Perovskite CsPbBr₃ Semiconductor Detector

Abstract

Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr3 must be considered when working in a long-term radiation environment. In this work, the Schottky type of perovskite CsPbBr3 detector was fabricated. Their electrical characteristics and γ-ray response were investigated before and after 60Co γ ray irradiation with 100 and 200 krad (Si) doses. The γ-ray response of the Schottky-type planar CsPbBr3 detector degrades significantly with the increase in total dose. At the total dose of 200 krad(Si), the spectral resolving ability to γ-ray response of the CsPbBr3 detector has disappeared. However, with annealing at room temperature for one week, the device’s performance was partially recovered. Therefore, these results indicate that the total dose effects strongly influence the detector performance of the perovskite CsPbBr3 semiconductor. Notably, it is concluded that the radiation-induced defects are not permanent, which could be mitigated even at room temperature. We believe this work could guide the development of perovskite detectors, especially under harsh radiation conditions.

Keywords

• perovskite
• total ionizing dose
• CsPbBr₃
• detector
• irradiation