All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan; Yida Li; Hasita Veluri; Yunshan Zhao; Baoshan Tang; Xinghua Wang; Evgeny Zamburg; Jin Feng Leong; Jessie Xuhua Niu; Umesh Chand; Aaron Voon-Yew Thean

doi:10.1038/s41467-019-13176-4

Nature Communications (Nov 2019)

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan,
Yida Li,
Hasita Veluri,
Yunshan Zhao,
Baoshan Tang,
Xinghua Wang,
Evgeny Zamburg,
Jin Feng Leong,
Jessie Xuhua Niu,
Umesh Chand,
Aaron Voon-Yew Thean

Affiliations

Maheswari Sivan: Department of Electrical and Computer Engineering, National University of Singapore
Yida Li: Department of Electrical and Computer Engineering, National University of Singapore
Hasita Veluri: Department of Electrical and Computer Engineering, National University of Singapore
Yunshan Zhao: Department of Electrical and Computer Engineering, National University of Singapore
Baoshan Tang: Department of Electrical and Computer Engineering, National University of Singapore
Xinghua Wang: Department of Electrical and Computer Engineering, National University of Singapore
Evgeny Zamburg: Department of Electrical and Computer Engineering, National University of Singapore
Jin Feng Leong: Department of Electrical and Computer Engineering, National University of Singapore
Jessie Xuhua Niu: Department of Electrical and Computer Engineering, National University of Singapore
Umesh Chand: Department of Electrical and Computer Engineering, National University of Singapore
Aaron Voon-Yew Thean: Department of Electrical and Computer Engineering, National University of Singapore

DOI: https://doi.org/10.1038/s41467-019-13176-4
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 12

Abstract

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Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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