Digital-logic assessment of junctionless twin gate trench channel (JL-TGTC) MOSFET for memory circuit applications

Ajay Kumar; Neha Gupta; Aditya Jain; Rajeev Gupta; Bharat Choudhary; Kaushal Kumar; Amit Kumar Goyal; Yehia Massoud

Memories - Materials, Devices, Circuits and Systems (Dec 2023)

Digital-logic assessment of junctionless twin gate trench channel (JL-TGTC) MOSFET for memory circuit applications

Ajay Kumar,
Neha Gupta,
Aditya Jain,
Rajeev Gupta,
Bharat Choudhary,
Kaushal Kumar,
Amit Kumar Goyal,
Yehia Massoud

Affiliations

Ajay Kumar: Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, 201309, India; Corresponding author.
Neha Gupta: Department of Applied Science, Dronacharya Group of Institutions, Greater Noida, Uttar Pradesh, 201306, India
Aditya Jain: Department of Electronics and Communication, Symbiosis Institute of Technology, Symbiosis International (Deemed University), Pune, Maharashtra, 412115, India
Rajeev Gupta: Department of Physics, College of Engineering Studies, University of Petroleum & Energy Studies, Dehradun, 248007, Uttarakhand, India
Bharat Choudhary: Department of Electronics & Communication Engineering, Malaviya National Institute of Technology, Jaipur, 302017, India
Kaushal Kumar: ECE Department, Graphic Era Deemed to be University, Dehradun, Uttarakhand, India
Amit Kumar Goyal: Innovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia
Yehia Massoud: Innovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia

Journal volume & issue: Vol. 6
p. 100087

Abstract

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In this paper, Junctionless Twin Gate Trench Channel (JL-TGTC) MOSFET with individual gate control is realized. The device gives full functionality of 2-input digital ‘AND’ and ‘NAND’ logics. The simulation depicts the results in the form of various parameters such as cutoff current, transfer characteristics, and potential profiles. All the simulations regarding device structure and functionality are done on TCAD. This new type of MOS device has improved applicability in low-voltage digital electronics such as sequential circuits etc.

Published in Memories - Materials, Devices, Circuits and Systems

ISSN: 2773-0646 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks; Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics: Computer engineering. Computer hardware
Website: https://www.sciencedirect.com/journal/memories-materials-devices-circuits-and-systems

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