Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power

Abstract

Abstract Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet structure with a vertically stacked design, featuring a high I ON/I OFF ratio. This Nanosheet design is combined with an induced tunnel field-effect transistor. By utilizing SiGe with a carrier mobility three times that of Si and employing a line tunneling mechanism, the research successfully achieves superior Band to Band characteristics, resulting in improved switching behavior and a lower Subthreshold Swing (SS). Comparative studies were conducted on three TFET types: Nanosheet PIN TFET, Nanosheet Schottky iTFET, and Fin iTFET. Results show that the Nanosheet PIN TFET has a higher I ON/I OFF ratio but poorer SSavg values at 47.63 mV/dec compared to the others. However, with a SiGe Body thickness of 3 nm, both Nanosheet iTFET and Fin iTFET exhibit higher I ON/I OFF ratios and superior SSavg values at 17.64 mV/dec. These findings suggest the potential of Nanosheet iTFET and Fin iTFET for low-power, lower thermal budgets, and fast-switching applications.

Keywords

• Nanosheet induced tunnel field-effect transistor (NS iTFET)
• Subthreshold swing (SS)
• Line tunneling
• Band-to-band tunneling (BTBT)
• SiGe