Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography

Makoto Kasu; Yuto Otsubo; Sayleap Sdoeung; Masanori Eguchi; Niloy Chandra Saha; Toshiyuki Oishi; Kohei Sasaki; Chia-Hung Lin; Jun Arima; Katsumi Kawasaki; Jun Hirabayashi

doi:10.35848/1882-0786/ad5bbe

Applied Physics Express (Jan 2024)

Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography

Makoto Kasu,
Yuto Otsubo,
Sayleap Sdoeung,
Masanori Eguchi,
Niloy Chandra Saha,
Toshiyuki Oishi,
Kohei Sasaki,
Chia-Hung Lin,
Jun Arima,
Katsumi Kawasaki,
Jun Hirabayashi

Affiliations

Makoto Kasu: Department of Electrical and Electronic Engineering, Saga University , Saga 840-8502, Japan
Yuto Otsubo: Department of Electrical and Electronic Engineering, Saga University , Saga 840-8502, Japan
Sayleap Sdoeung: ORCiD; Department of Electrical and Electronic Engineering, Saga University , Saga 840-8502, Japan
Masanori Eguchi: National Institute of Technology, Kure College, 2-2-11 Aga-minami, Kure, Hiroshima 737-8506, Japan
Niloy Chandra Saha: ORCiD; Department of Electrical and Electronic Engineering, Saga University , Saga 840-8502, Japan
Toshiyuki Oishi: Department of Electrical and Electronic Engineering, Saga University , Saga 840-8502, Japan
Kohei Sasaki: Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan
Chia-Hung Lin: Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan
Jun Arima: TDK Corporation, Ichikawa, Chiba 272-8558, Japan
Katsumi Kawasaki: TDK Corporation, Ichikawa, Chiba 272-8558, Japan
Jun Hirabayashi: TDK Corporation, Ichikawa, Chiba 272-8558, Japan

DOI: https://doi.org/10.35848/1882-0786/ad5bbe
Journal volume & issue: Vol. 17, no. 7
p. 071004

Abstract

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We have found microgrooves on the (001) β -Ga _2 O _3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μ A at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( $\mathop{1}\limits^{\unicode{x00305}}$ 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ $\mathop{1}\limits^{\unicode{x00305}}$ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 10 ^5 V cm ^−1 at $-$ 50 V, which is approximately twice that of the flat surface.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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