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ACS Omega
(Oct 2020)
In Situ Study of Molecular Doping of Chlorine on MoS2 Field Effect Transistor Device in Ultrahigh Vacuum Conditions
Nguyen Tat Trung,
Mohammad Ikram Hossain,
Md Iftekharul Alam,
Atsushi Ando,
Osamu Kitakami,
Nobuaki Kikuchi,
Tsuyoshi Takaoka,
Yasuyuki Sainoo,
Ryuichi Arafune,
Tadahiro Komeda
Affiliations
Nguyen Tat Trung
Department of Chemistry, Graduate School of Science, Tohoku University, Sendai, Japan
Mohammad Ikram Hossain
Department of Chemistry, Graduate School of Science, Tohoku University, Sendai, Japan
Md Iftekharul Alam
Department of Chemistry, Graduate School of Science, Tohoku University, Sendai, Japan
Atsushi Ando
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
Osamu Kitakami
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Sendai, Japan
Nobuaki Kikuchi
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Sendai, Japan
Tsuyoshi Takaoka
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Sendai, Japan
Yasuyuki Sainoo
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Sendai, Japan
Ryuichi Arafune
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
Tadahiro Komeda
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Sendai, Japan
DOI
https://doi.org/10.1021/acsomega.0c03741
Journal volume & issue
Vol. 5, no. 43
pp. 28108 – 28115
Abstract
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No abstracts available.
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