Opto-Electronic Advances (Apr 2022)

Field distribution of the Z2 topological edge state revealed by cathodoluminescence nanoscopy

  • Xiao He,
  • Donglin Liu,
  • Hongfei Wang,
  • Liheng Zheng,
  • Bo Xu,
  • Biye Xie,
  • Meiling Jiang,
  • Zhixin Liu,
  • Jin Zhang,
  • Minghui Lu,
  • Zheyu Fang

DOI
https://doi.org/10.29026/oea.2022.210015
Journal volume & issue
Vol. 5, no. 4
pp. 1 – 9

Abstract

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Photonic topological insulators with robust boundary states can enable great applications for optical communication and quantum emission, such as unidirectional waveguide and single-mode laser. However, because of the diffraction limit of light, the physical insight of topological resonance remains unexplored in detail, like the dark line that exists with the crystalline symmetry-protected topological edge state. Here, we experimentally observe the dark line of the Z2 photonic topological insulator in the visible range by photoluminescence and specify its location by cathodoluminescence characterization, and elucidate its mechanism with the p-d orbital electromagnetic field distribution which calculated by numerical simulation. Our investigation provides a deeper understanding of Z2 topological edge states and may have great significance to the design of future on-chip topological devices.

Keywords