Nanophotonics (Nov 2019)

Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

  • Meng Linghai,
  • Wu Xian-Gang,
  • Ma Sai,
  • Shi Lifu,
  • Zhang Mengjiao,
  • Wang Lingxue,
  • Chen Yu,
  • Chen Qi,
  • Zhong Haizheng

DOI
https://doi.org/10.1515/nanoph-2019-0320
Journal volume & issue
Vol. 9, no. 1
pp. 93 – 100

Abstract

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Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

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