Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Abstract

Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.