Advanced Electronic Materials (Sep 2024)

Programmable Racetrack for Magnetic Domain Wall Motion via Local Tuning of Exchange Biased Field

  • Hyun‐Joong Kim,
  • Kyoung‐Woong Moon,
  • Seongsoo Yoon,
  • Kyongmo An,
  • Changsoo Kim,
  • Seungmo Yang,
  • Tae‐Seong Ju,
  • Jong Wan Son,
  • Jung‐Il Hong,
  • Chanyong Hwang

DOI
https://doi.org/10.1002/aelm.202400027
Journal volume & issue
Vol. 10, no. 9
pp. n/a – n/a

Abstract

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Abstract To overcome memory bottleneck issues in memory‐centric chip technologies, in‐memory computing has been considered an alternative route involving simultaneous data storage and computing in a memory network. In the context of spintronics, a memory‐in‐logic device based on spin‐transfer‐torque or spin‐orbit‐torque magnetoresistive random‐access memory, and a magnetic domain wall (DW) racetrack has been studied. To expand the functionalities of a conventional magnetic DW racetrack, the study devises a reprogrammable exchange‐biased DW racetrack with local engineering of the exchange bias field (HE) in continuous magnetic films without requiring a lithography process for specific patterning of the films. Furthermore, current‐driven and field‐driven DW motion along the exchange‐biased racetrack is demonstrated. Additionally, within the route of the locally different exchange‐biased racetrack, a gate function can be performed to guide or stop DW motion by locally tuning HE. The complex maze racetrack is rewritable, and multiple input channels can be controlled.

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