Engineering and Technology Journal (Apr 2014)

Preparation and Characterization of High Quality SnO2 Films Grown by (HPCVD)

  • Baha T. Chiad,
  • Nathera Ali,
  • Nagam Th.Ali

DOI
https://doi.org/10.30684/etj.32.4B.20
Journal volume & issue
Vol. 32, no. 4B
pp. 801 – 810

Abstract

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In this research SnO2 thin films have been prepared by using hot plate atmospheric pressure chemical vapor deposition (HPCVD) on glass and Si (n-type) substrates at various temperatures. Optical properties have been measured by UV-VIS spectrophotometer, maximum transmittance about (94%) at 400 0C. Structure properties have been studied by using X-ray diffraction (XRD) , its shows that all films have a crystalline structure in nature and by increasing growth temperature from(350-500) 0C diffraction peaks becomes sharper and grain size has been change. Atomic force microscopy (AFM) uses to analyze the morphology of the Tine Oxides surface structure. Roughness & Root mean square for different temperature have been investigated. The results show that both increase with substrate temperature increase this measurements deal with X-Ray diffraction results, that there is large change in the structure state of SnO2 thin f film by changing temperature parameter.

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