Journal of Advanced Dielectrics (Oct 2022)

Embedding epitaxial VO2 film with quality metal-insulator transition to SAW devices

  • M. E. Kutepov,
  • G. Ya. Karapetyan,
  • T. A. Minasyan,
  • V. E. Kaydashev,
  • I. V. Lisnevskaya,
  • K. G. Abdulvakhidov,
  • A. A. Kozmin,
  • E. M. Kaidashev

DOI
https://doi.org/10.1142/S2010135X22500187
Journal volume & issue
Vol. 12, no. 05

Abstract

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Epitaxial VO2 films grown by pulsed laser deposition (PLD) method with superior phase transition related switching characteristics are successfully embedded to SAW devices using concept of the “impedance loaded SAW sensor”. A resistance of VO2 sensor abruptly drops from 0.7 M[Formula: see text] to 90 [Formula: see text] when it is heated above [Formula: see text]65[Formula: see text]C and shows a narrow hysteresis loops when switching. Two designs of SAW devices are examined in which RF signal is reflected back from interdigital transducer (IDT) or a surface acoustic waves (SAW) is transferred through a coupler and the RF response is altered 2 and 3 times correspondingly upon the phase transition in VO2. In the proposed devices with external load, a SAW does not propagate via VO2 film and therefore is not attenuated which is beneficiary for wireless applications. Additionally, a SAW phase shift as great as 50[Formula: see text] is induced to the SAW transferred through the coupler due to the phase transition in VO2. The proposed approach may boost the development of remotely controlled autonomous sensors, including those based on VO2 metamaterials and hybrid plasmonic structures for near IR/middle IR and sub-THz/THz applications.

Keywords