Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

Abstract

Raman scattering spectroscopy (RSS) has the merits of non-destructiveness, fast analysis, and identification of SiC polytype materials. By way of angle-dependent Raman scattering (ADRS), the isotropic characteristics are confirmed for c-face 4H-SiC, while the anisotropic properties of a-face 4H-SiC are revealed and studied in detail via combined experiments and theoretical calculation. The variation functional relationship of the angle between the incident laser polarization direction and the parallel (perpendicular) polarization direction was well established. The selection rules of wurtzite 4H-SiC are deduced, and the intensity variations of the A1, E2, and E1 Raman phonon modes dependent on the incident angle are calculated, and well-matched with experimental data. Raman tensor elements of various modes are determined.

Keywords

• silicon carbide
• 4H-SiC
• raman scattering
• anisotropic property
• angular dependence
• raman tensor