Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Yulin Liu; Qilai Chen; Yanbo Guo; Bingjie Guo; Gang Liu; Yanchao Liu; Lei He; Yutong Li; Jingyan He; Minghua Tang

doi:10.3390/mi15050605

Micromachines (Apr 2024)

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Yulin Liu,
Qilai Chen,
Yanbo Guo,
Bingjie Guo,
Gang Liu,
Yanchao Liu,
Lei He,
Yutong Li,
Jingyan He,
Minghua Tang

Affiliations

Yulin Liu: School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Qilai Chen: Aerospace Science & Industry Shenzhen (Group) Co., Ltd., Shenzhen 518000, China
Yanbo Guo: Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China
Bingjie Guo: Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China
Gang Liu: Department of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China
Yanchao Liu: Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Lei He: Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Yutong Li: Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Jingyan He: Shi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Minghua Tang: School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

DOI: https://doi.org/10.3390/mi15050605
Journal volume & issue: Vol. 15, no. 5
p. 605

Abstract

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Resistive random access memory (RRAM) holds great promise for in-memory computing, which is considered the most promising strategy for solving the von Neumann bottleneck. However, there are still significant problems in its application due to the non-uniform performance of RRAM devices. In this work, a bilayer dielectric layer memristor was designed based on the difference in the Gibbs free energy of the oxide. We fabricated Au/Ta2O5/HfO2/Ta/Pt (S3) devices with excellent uniformity. Compared with Au/HfO2/Pt (S1) and Au/Ta2O5/Pt (S2) devices, the S3 device has a low reset voltage fluctuation of 2.44%, and the resistive coefficients of variation are 13.12% and 3.84% in HRS and LRS, respectively, over 200 cycles. Otherwise, the bilayer device has better linearity and more conductance states in multi-state regulation. At the same time, we analyze the physical mechanism of the bilayer device and provide a physical model of ion migration. This work provides a new idea for designing and fabricating resistive devices with stable performance.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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