High‐Density Artificial Synapse Array Consisting of Homogeneous Electrolyte‐Gated Transistors

Abstract

Abstract The artificial synapse array with an electrolyte‐gated transistor (EGT) as an array unit presents considerable potential for neuromorphic computation. However, the integration of EGTs faces the drawback of the conflict between the polymer electrolytes and photo‐lithography. This study presents a scheme based on a lateral‐gate structure to realize high‐density integration of EGTs and proposes the integration of 100 × 100 EGTs into a 2.5 × 2.5 cm2 glass, with a unit density of up to 1600 devices cm−2. Furthermore, an electrolyte framework is developed to enhance the array performance, with ionic conductivity of up to 2.87 × 10−3 S cm−1 owing to the porosity of zeolitic imidazolate frameworks‐67. The artificial synapse array realizes image processing functions, and exhibits high performance and homogeneity. The handwriting recognition accuracy of a representative device reaches 92.80%, with the standard deviation of all the devices being limited to 9.69%. The integrated array and its high performance demonstrate the feasibility of the scheme and provide a solid reference for the integration of EGTs.

Keywords

• artificial synapse array
• electrolyte‐gated transistors
• lateral‐gate
• Photo‐Lithography
• metal‐organic framework