Advances in near-infrared avalanche diode single-photon detectors

Chen Liu; Hai-Feng Ye; Yan-Li Shi

Chip (Mar 2022)

Advances in near-infrared avalanche diode single-photon detectors

Chen Liu,
Hai-Feng Ye,
Yan-Li Shi

Affiliations

Chen Liu: School of Physics and Astronomy, Yunnan University, Kunming 650091, China; Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming, Yunnan 650091, China
Hai-Feng Ye: School of Physics and Astronomy, Yunnan University, Kunming 650091, China; Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming, Yunnan 650091, China
Yan-Li Shi: School of Physics and Astronomy, Yunnan University, Kunming 650091, China; Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming, Yunnan 650091, China; Corresponding author at: Yunnan University, School of Physics and Astronomy, Kunming 650091, China.

Journal volume & issue: Vol. 1, no. 1
p. 100005

Abstract

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Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration. The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present. Its device performance is still being continuously improved through the optimization of device structure and external quenching circuits. This paper analyzes the latest development and application of these InGaAs/InP photodiodes, then briefly reviews other near-infrared single-photon detection technologies based on new materials and new mechanisms.

Published in Chip

ISSN: 2709-4723 (Print); 2772-2724 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Technology (General): Industrial engineering. Management engineering: Information technology
Website: https://www.sciencedirect.com/journal/chip

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