Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Qiang Zhang; Yuxuan Chen; Chendong Zhang; Chi-Ruei Pan; Mei-Yin Chou; Changgan Zeng; Chih-Kang Shih

doi:10.1038/ncomms13843

Nature Communications (Dec 2016)

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Qiang Zhang,
Yuxuan Chen,
Chendong Zhang,
Chi-Ruei Pan,
Mei-Yin Chou,
Changgan Zeng,
Chih-Kang Shih

Affiliations

Qiang Zhang: Department of Physics, University of Texas at Austin
Yuxuan Chen: Department of Physics, University of Texas at Austin
Chendong Zhang: Department of Physics, University of Texas at Austin
Chi-Ruei Pan: School of Physics, Georgia Institute of Technology
Mei-Yin Chou: School of Physics, Georgia Institute of Technology
Changgan Zeng: Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics
Chih-Kang Shih: Department of Physics, University of Texas at Austin

DOI: https://doi.org/10.1038/ncomms13843
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 7

Abstract

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Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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