Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

• Roman I. Romanov,
• Maxim G. Kozodaev,
• Anna G. Chernikova,
• Ivan V. Zabrosaev,
• Anastasia A. Chouprik,
• Sergey S. Zarubin,
• Sergey M. Novikov,
• Valentyn S. Volkov,
• Andrey M. Markeev

Affiliations

Roman I. Romanov

Maxim G. Kozodaev

Anna G. Chernikova

Ivan V. Zabrosaev

Anastasia A. Chouprik

Sergey S. Zarubin

Sergey M. Novikov

Valentyn S. Volkov

Andrey M. Markeev