Communications (Feb 2014)

NSOM Lithography for Organized Growth of Gap Nanowires

  • Ivana Lettrichova,
  • Dusan Pudis,
  • Agata Laurencikova,
  • Stanislav Hasenohrl,
  • Jozef Novak,
  • Jaroslava Skriniarova

DOI
https://doi.org/10.26552/com.C.2014.1.21-25
Journal volume & issue
Vol. 16, no. 1
pp. 21 – 25

Abstract

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In this contribution, near field scanning optical microscope (NSOM) lithography is presented as a tool for organized growth of nanowires. Non contact mode of NSOM lithography was used to pattern planar structures in photoresist deposited on GaP substrate. In combination with lift-off technique, metal-catalyst particles on GaP substrate for subsequent growth of GaP nanowires were prepared. Different periodic and predefined arrangements of GaP nanowires were achieved.

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