Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors

Li-Feng Zhu; Shiqing Deng; Lei Zhao; Gen Li; Qi Wang; Linhai Li; Yongke Yan; He Qi; Bo-Ping Zhang; Jun Chen; Jing-Feng Li

doi:10.1038/s41467-023-36919-w

Nature Communications (Mar 2023)

Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors

Li-Feng Zhu,
Shiqing Deng,
Lei Zhao,
Gen Li,
Qi Wang,
Linhai Li,
Yongke Yan,
He Qi,
Bo-Ping Zhang,
Jun Chen,
Jing-Feng Li

Affiliations

Li-Feng Zhu: School of Materials Science and Engineering, University of Science and Technology Beijing
Shiqing Deng: Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing
Lei Zhao: College Physics Science & Technology, Hebei University
Gen Li: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
Qi Wang: School of Materials Science and Engineering, University of Science and Technology Beijing
Linhai Li: School of Materials Science and Engineering, University of Science and Technology Beijing
Yongke Yan: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University
He Qi: Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing
Bo-Ping Zhang: School of Materials Science and Engineering, University of Science and Technology Beijing
Jun Chen: Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing
Jing-Feng Li: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University

DOI: https://doi.org/10.1038/s41467-023-36919-w
Journal volume & issue: Vol. 14, no. 1
pp. 1 – 9

Abstract

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AgNbO3 has a potential for high power capacitors due to its antiferroelectric characteristics. Here, the authors achieve multilayer capacitors with energy-storage density of 14 J·cm−3 by heterovalent-doping-enabled atom-displacement fluctuation.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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