Tuning the band topology of GdSb by epitaxial strain

Hadass S. Inbar; Dai Q. Ho; Shouvik Chatterjee; Aaron N. Engel; Shoaib Khalid; Connor P. Dempsey; Mihir Pendharkar; Yu Hao Chang; Shinichi Nishihaya; Alexei V. Fedorov; Donghui Lu; Makoto Hashimoto; Dan Read; Anderson Janotti; Christopher J. Palmstrøm

doi:10.1063/5.0155218

APL Materials (Nov 2023)

Tuning the band topology of GdSb by epitaxial strain

Hadass S. Inbar,
Dai Q. Ho,
Shouvik Chatterjee,
Aaron N. Engel,
Shoaib Khalid,
Connor P. Dempsey,
Mihir Pendharkar,
Yu Hao Chang,
Shinichi Nishihaya,
Alexei V. Fedorov,
Donghui Lu,
Makoto Hashimoto,
Dan Read,
Anderson Janotti,
Christopher J. Palmstrøm

Affiliations

Hadass S. Inbar: Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Dai Q. Ho: Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
Shouvik Chatterjee: Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Aaron N. Engel: Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Shoaib Khalid: Department of Physics, School of Natural Sciences, National University of Science and Technology, Islamabad 44000, Pakistan
Connor P. Dempsey: Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Mihir Pendharkar: Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Yu Hao Chang: Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Shinichi Nishihaya: Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Alexei V. Fedorov: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Donghui Lu: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Makoto Hashimoto: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Dan Read: Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA
Anderson Janotti: Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
Christopher J. Palmstrøm: Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

DOI: https://doi.org/10.1063/5.0155218
Journal volume & issue: Vol. 11, no. 11
pp. 111106 – 111106-9

Abstract

Read online

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

About the journal