UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Abstract

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

Keywords

• gas sensors
• SiC-FET
• dynamic operation
• gate bias cycled operation
• linear discriminant analysis