Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance

Zi Ye; Mengyu Chen; Xingtong Chen; Wenchen Ma; Xiaojuan Sun; Longjia Wu; Xiongfeng Lin; Yu Chen; Song Chen

doi:10.1038/s41528-022-00231-2

npj Flexible Electronics (Nov 2022)

Solution-processed quantum-dot light-emitting diodes combining ultrahigh operational stability, shelf stability, and luminance

Zi Ye,
Mengyu Chen,
Xingtong Chen,
Wenchen Ma,
Xiaojuan Sun,
Longjia Wu,
Xiongfeng Lin,
Yu Chen,
Song Chen

Affiliations

Zi Ye: Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University
Mengyu Chen: Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University
Xingtong Chen: Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University
Wenchen Ma: School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University
Xiaojuan Sun: Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University
Longjia Wu: TCL Corporate Research
Xiongfeng Lin: TCL Corporate Research
Yu Chen: School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University
Song Chen: Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University

DOI: https://doi.org/10.1038/s41528-022-00231-2
Journal volume & issue: Vol. 6, no. 1
pp. 1 – 7

Abstract

Read online

Abstract The shelf-stability issue, originating from the ZnO-induced positive aging effect, poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes (QLEDs). Currently, none of the proposed solutions can simultaneously inhibit exciton quenching caused by the ZnO-based electron-transporting layer (ETL) and retain other advantages of ZnO. Here in this work, we propose a bilayer design of ETL in which a buffer layer assembled of SnO2 nanoparticles (NPs) suppresses the QD-ETL exciton quenching and tunes charge balance while ZnO NPs provide high electron conductivity. As a result, the bottom-emitting QLED combining capped ZnO and SnO2 buffer exhibit a maximum luminance over 100,000 cd m−2 and a T 95 operational lifetime averaging 6200 h at 1000 cd m−2 on the premise of entirely inhibiting positive aging.

Published in npj Flexible Electronics

ISSN: 2397-4621 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics; Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/npjflexelectron/

About the journal