Nature Communications (Sep 2020)

High-speed III-V nanowire photodetector monolithically integrated on Si

  • Svenja Mauthe,
  • Yannick Baumgartner,
  • Marilyne Sousa,
  • Qian Ding,
  • Marta D. Rossell,
  • Andreas Schenk,
  • Lukas Czornomaz,
  • Kirsten E. Moselund

DOI
https://doi.org/10.1038/s41467-020-18374-z
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 7

Abstract

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Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceeding 25 GHz.