Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer

Ke-Jing Lee; Wei-Shao Lin; Li-Wen Wang; Hsin-Ni Lin; Yeong-Her Wang

doi:10.3390/nano12244412

Nanomaterials (Dec 2022)

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer

Ke-Jing Lee,
Wei-Shao Lin,
Li-Wen Wang,
Hsin-Ni Lin,
Yeong-Her Wang

Affiliations

Ke-Jing Lee: Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan
Wei-Shao Lin: Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan
Li-Wen Wang: Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan
Hsin-Ni Lin: Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
Yeong-Her Wang: Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan

DOI: https://doi.org/10.3390/nano12244412
Journal volume & issue: Vol. 12, no. 24
p. 4412

Abstract

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The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 107, lower operation voltage (VSET = −0.8 V and VRESET = 2.05 V), uniform film, and device stability of more than 105 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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