Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Seunguk Song; Aram Yoon; Jong-Kwon Ha; Jihoon Yang; Sora Jang; Chloe Leblanc; Jaewon Wang; Yeoseon Sim; Deep Jariwala; Seung Kyu Min; Zonghoon Lee; Soon-Yong Kwon

doi:10.1038/s41467-022-32582-9

Nature Communications (Aug 2022)

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Seunguk Song,
Aram Yoon,
Jong-Kwon Ha,
Jihoon Yang,
Sora Jang,
Chloe Leblanc,
Jaewon Wang,
Yeoseon Sim,
Deep Jariwala,
Seung Kyu Min,
Zonghoon Lee,
Soon-Yong Kwon

Affiliations

Seunguk Song: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Aram Yoon: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Jong-Kwon Ha: Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST)
Jihoon Yang: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Sora Jang: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Chloe Leblanc: Department of Electrical and Systems Engineering, University of Pennsylvania
Jaewon Wang: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Yeoseon Sim: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Deep Jariwala: Department of Electrical and Systems Engineering, University of Pennsylvania
Seung Kyu Min: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS)
Zonghoon Lee: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)
Soon-Yong Kwon: Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)

DOI: https://doi.org/10.1038/s41467-022-32582-9
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 11

Abstract

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Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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