Stacking order modulated anomalous valley Hall effect in antiferromagnetic MXene

Abstract

The valley index is a promising degree of freedom for information processing in electronic devices. However, the researches on valley polarization are mainly focused on ferromagnetic order, which breaks the time reversal symmetry simultaneously. Here, a novel paradigm for achieving stacking order modulated anomalous valley Hall (AVH) effect is proposed in antiferromagnetic monolayers. The paradigm involves the introduction and reversal of nonuniform potentials by modulating the position of substrate, to break the combined symmetry of spatial inversion and time reversal (PT symmetry) and achieve stacking-dependent valley spin splitting. Based on first-principles calculations, we discover spontaneous valley polarization in antiferromagnetic Cr2CH2 MXene and stacking-dependent valley spin splitting in Cr2CH2/Sc2CO2 heterostructure. Furthermore, switching the ferroelectric polarization of monolayer Sc2CO2 results in a semiconductor-metal transition in Cr2CH2/Sc2CO2, accompanied by the disappearance of valley physics. Our findings provide an alternative way to develop controllable valleytronics devices based on antiferromagnetic monolayers.

Keywords

• Stacking order
• Antiferromagnetism
• AVH effect
• Electrical control