Effect of Atomic Oxygen on Electric Properties of Graphene Films

LIU Yu-ming; LI Man; LIU Xiang-peng; ZHANG Kai; ZHAO Chun-qing

doi:10.11868/j.issn.1001-4381.2015.001348

Cailiao gongcheng (Aug 2017)

Effect of Atomic Oxygen on Electric Properties of Graphene Films

LIU Yu-ming,
LI Man,
LIU Xiang-peng,
ZHANG Kai,
ZHAO Chun-qing

Affiliations

LIU Yu-ming: Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China
LI Man: Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China
LIU Xiang-peng: Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China
ZHANG Kai: Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China
ZHAO Chun-qing: Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China

DOI: https://doi.org/10.11868/j.issn.1001-4381.2015.001348
Journal volume & issue: Vol. 45, no. 8
pp. 9 – 13

Abstract

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The resistance and the surface morphology of the graphene films were studied after atomic oxygen exposure. The graphene films can be etched away during atomic oxygen exposure, the resistance of graphene films decreases at first and then increases. It shows that the adsorption of oxygen atom may play an important role in the change of the resistance of graphene films at the beginning of the exposure and then the change of the resistance conforms to the law of resistance. The atomic oxygen erosion rate which is about 1.2×10-25cm3/atom to 1.3×10-25cm3/atom can be obtained. A kind of new atomic oxygen detector was put forward based on the relationship between the resistance of graphene films and atomic oxygen fluence.

Published in Cailiao gongcheng

ISSN: 1001-4381 (Print)
Publisher: Journal of Materials Engineering
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: http://jme.biam.ac.cn/CN/1001-4381/home.shtml

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