SiC-on-insulator based lateral power device and it’ s analytical models

Jiafei Yao; Ang Li; Yuao Liu; Ziwei Hu; Man Li; Kemeng Yang; Jun Zhang; Jing Chen; Maolin Zhang; Yufeng Guo

Results in Physics (Mar 2024)

SiC-on-insulator based lateral power device and it’ s analytical models

Jiafei Yao,
Ang Li,
Yuao Liu,
Ziwei Hu,
Man Li,
Kemeng Yang,
Jun Zhang,
Jing Chen,
Maolin Zhang,
Yufeng Guo

Affiliations

Jiafei Yao: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, China
Ang Li: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, China
Yuao Liu: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, China
Ziwei Hu: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, China
Man Li: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China
Kemeng Yang: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China
Jun Zhang: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China
Jing Chen: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China
Maolin Zhang: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China
Yufeng Guo: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Corresponding author at: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.

Journal volume & issue: Vol. 58
p. 107477

Abstract

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This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analyze the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analyze the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both the analytical and numerical results provide the physical explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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