Heterostructures based on inorganic and organic van der Waals systems

Gwan-Hyoung Lee; Chul-Ho Lee; Arend M. van der Zande; Minyong Han; Xu Cui; Ghidewon Arefe; Colin Nuckolls; Tony F. Heinz; James Hone; Philip Kim

doi:10.1063/1.4894435

APL Materials (Sep 2014)

Heterostructures based on inorganic and organic van der Waals systems

Gwan-Hyoung Lee,
Chul-Ho Lee,
Arend M. van der Zande,
Minyong Han,
Xu Cui,
Ghidewon Arefe,
Colin Nuckolls,
Tony F. Heinz,
James Hone,
Philip Kim

Affiliations

Gwan-Hyoung Lee: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea
Chul-Ho Lee: KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, South Korea
Arend M. van der Zande: Energy Frontier Research Center (EFRC), Columbia University, New York, New York 10027, USA
Minyong Han: Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
Xu Cui: Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
Ghidewon Arefe: Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
Colin Nuckolls: Department of Chemistry, Columbia University, New York, New York 10027, USA
Tony F. Heinz: Department of Electrical Engineering, Columbia University, New York, New York 10027, USA
James Hone: Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
Philip Kim: Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA

DOI: https://doi.org/10.1063/1.4894435
Journal volume & issue: Vol. 2, no. 9
pp. 092511 – 092511-7

Abstract

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The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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