INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY

Abstract

Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy.

Keywords

• mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties.