Pulsed laser deposition of MoS2 thin films at different mean kinetic plasma energies

Abstract

In recent years, molybdenum disulfide has become a material of great interest for research for electronic and optoelectronic applications due to its 2-dimensional graphene-like structure and its bandgap within the visible spectrum. In this work, thin films of MoS2 were grown using pulsed laser deposition on glass substrates at room temperature and at deposition pressure of 2 × 10−5 Torr. We ablated a MoS2 target obtained by compressing high-purity powders, with a Nd-YAG pulsed laser with a wavelength of 1064 nm, 6 ns pulse width, and 10 Hz repetition rate. Laser produced plasmas were diagnosed by means of the time-of-flight technique using a Langmuir planar probe, from which mean kinetic energy and density of ions were estimated. Experimental control is more reliable using plasma parameters rather than fluence. The crystalline properties of the deposits were characterized using Raman spectroscopy and X-Ray diffraction; their chemical analysis was carried out by X-ray photoelectron spectroscopy; their thickness and morphology were characterized using atomic force microscopy and scanning electron microscopy, respectively. Results are discussed as a function of mean kinetic energy variations. It was observed that as the mean kinetic energy of the plasma decreased, the crystallinity improved and the crystal size increased.

Keywords

• MoS2
• Semiconductors
• Laser Ablation
• Thin Films
• PLD