Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

Yi-Yun Chen; Yuan-Chang Jhang; Chia-Jung Wu; Hsiang Chen; Yung-Sen Lin; Chia-Feng Lin

doi:10.3390/cryst8110418

Crystals (Nov 2018)

Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

Yi-Yun Chen,
Yuan-Chang Jhang,
Chia-Jung Wu,
Hsiang Chen,
Yung-Sen Lin,
Chia-Feng Lin

Affiliations

Yi-Yun Chen: Department of Materials Science and Engineering, Innovation and Development Center of Sustainable Agriculture, Research Center for sustainable energy and Nanotechnology, National Chung Hsing University, No. 145, Xingda Road, South Dist., Taichung 402, Taiwan
Yuan-Chang Jhang: Department of Materials Science and Engineering, Innovation and Development Center of Sustainable Agriculture, Research Center for sustainable energy and Nanotechnology, National Chung Hsing University, No. 145, Xingda Road, South Dist., Taichung 402, Taiwan
Chia-Jung Wu: Department of Materials Science and Engineering, Innovation and Development Center of Sustainable Agriculture, Research Center for sustainable energy and Nanotechnology, National Chung Hsing University, No. 145, Xingda Road, South Dist., Taichung 402, Taiwan
Hsiang Chen: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli Township, Nantou County 545, Taiwan
Yung-Sen Lin: Department of Chemical Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan
Chia-Feng Lin: Department of Materials Science and Engineering, Innovation and Development Center of Sustainable Agriculture, Research Center for sustainable energy and Nanotechnology, National Chung Hsing University, No. 145, Xingda Road, South Dist., Taichung 402, Taiwan

DOI: https://doi.org/10.3390/cryst8110418
Journal volume & issue: Vol. 8, no. 11
p. 418

Abstract

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An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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