Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Xue Zhang; Wenxian Yang; Zhiwei Xing; Haibing Qiu; Ying Gu; Lifeng Bian; Shulong Lu; Hua Qin; Yong Cai; Yuta Suzuki; Sakuya Kaneko; Yuki Matsuda; Shinji Izumi; Yuichi Nakamura; Atsushi Tackeuchi

doi:10.3390/cryst11111312

Crystals (Oct 2021)

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Xue Zhang,
Wenxian Yang,
Zhiwei Xing,
Haibing Qiu,
Ying Gu,
Lifeng Bian,
Shulong Lu,
Hua Qin,
Yong Cai,
Yuta Suzuki,
Sakuya Kaneko,
Yuki Matsuda,
Shinji Izumi,
Yuichi Nakamura,
Atsushi Tackeuchi

Affiliations

Xue Zhang: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Wenxian Yang: Key Lab of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
Zhiwei Xing: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Haibing Qiu: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Ying Gu: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Lifeng Bian: Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
Shulong Lu: Key Lab of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
Hua Qin: Key Lab of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
Yong Cai: Key Lab of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
Yuta Suzuki: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Sakuya Kaneko: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Yuki Matsuda: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Shinji Izumi: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Yuichi Nakamura: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Atsushi Tackeuchi: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

DOI: https://doi.org/10.3390/cryst11111312
Journal volume & issue: Vol. 11, no. 11
p. 1312

Abstract

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InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template. A high density of over 3.8 × 1010 cm−2 is achieved and InGaN QDs exhibit a relatively uniform size distribution and good dispersity. Strong localization effect in as-grown InGaN QDs has been evidenced by temperature-dependent photoluminescence (PL). The variation of peak energy is as small as 35 meV with increasing temperature from 10 K to 300 K, implying excellent temperature stability of emission wavelength for InGaN MQDs. Moreover, the radiative and nonradiative recombination times were calculated by time-resolved PL (TRPL) measurements, and the temperature dependence of PL decay times reveal that radiative recombination dominates the recombination process due to the low dislocation density of QDs structure.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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