Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films

Giovanna Latronico; Saurabh Singh; Paolo Mele; Abdalla Darwish; Sergey Sarkisov; Sian Wei Pan; Yukihiro Kawamura; Chihiro Sekine; Takahiro Baba; Takao Mori; Tsunehiro Takeuchi; Ataru Ichinose; Simeon Wilson

doi:10.3390/ma14226929

Materials (Nov 2021)

Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films

Giovanna Latronico,
Saurabh Singh,
Paolo Mele,
Abdalla Darwish,
Sergey Sarkisov,
Sian Wei Pan,
Yukihiro Kawamura,
Chihiro Sekine,
Takahiro Baba,
Takao Mori,
Tsunehiro Takeuchi,
Ataru Ichinose,
Simeon Wilson

Affiliations

Giovanna Latronico: College of Engineering, Shibaura Institute of Technology, 307 Fukasaku, Minuma-ku, Saitama 337-8570, Saitama Prefecture, Japan
Saurabh Singh: Toyota Technological Institute, Tempaku Ward, Hisakata 2-12-1, Nagoya 468-8511, Aichi Prefecture, Japan
Paolo Mele: College of Engineering, Shibaura Institute of Technology, 307 Fukasaku, Minuma-ku, Saitama 337-8570, Saitama Prefecture, Japan
Abdalla Darwish: Physics and Engineering Department, Dillard University, 2601 Gentilly Blvd, New Orleans, LA 70122, USA
Sergey Sarkisov: SSS Optical Technologies, 515 Sparkman Drive, Huntsville, AL 35816, USA
Sian Wei Pan: Muroran Institute of Technology, 27-1 Mizumotocho, Muroran 050-8585, Hokkaido Prefecture, Japan
Yukihiro Kawamura: Muroran Institute of Technology, 27-1 Mizumotocho, Muroran 050-8585, Hokkaido Prefecture, Japan
Chihiro Sekine: Muroran Institute of Technology, 27-1 Mizumotocho, Muroran 050-8585, Hokkaido Prefecture, Japan
Takahiro Baba: International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Ibaraki Prefecture, Japan
Takao Mori: International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044, Ibaraki Prefecture, Japan
Tsunehiro Takeuchi: Toyota Technological Institute, Tempaku Ward, Hisakata 2-12-1, Nagoya 468-8511, Aichi Prefecture, Japan
Ataru Ichinose: Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka 240-0196, Kanagawa Prefecture, Japan
Simeon Wilson: Physics and Engineering Department, Dillard University, 2601 Gentilly Blvd, New Orleans, LA 70122, USA

DOI: https://doi.org/10.3390/ma14226929
Journal volume & issue: Vol. 14, no. 22
p. 6929

Abstract

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The effect of SnO2 addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al2O3 substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO2 thin film grown on silica, with a power factor (PF) of 211.8 μW/m·K2 at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. PF was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K2) while thermal conductivity κ was reduced about four times.

Published in Materials

ISSN: 1996-1944 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering; Technology: Engineering (General). Civil engineering (General); Science: Natural history (General): Microscopy; Science: Physics: Descriptive and experimental mechanics
Website: http://www.mdpi.com/journal/materials/

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