APL Materials (Sep 2013)

Integration of TaOx-based resistive-switching element and GaAs diode

  • Z. Xu,
  • X. Tong,
  • S. F. Yoon,
  • Y. C. Yeo,
  • C. K. Chia,
  • G. K. Dalapati,
  • D. Z. Chi

DOI
https://doi.org/10.1063/1.4820421
Journal volume & issue
Vol. 1, no. 3
pp. 032121 – 032121

Abstract

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We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.