Improved Charge Transfer Contribution by Cosputtering Ag and ZnO

Bingbing Han; Shuang Guo; Sila Jin; Eungyeong Park; Xiangxin Xue; Lei Chen; Young Mee Jung

doi:10.3390/nano10081455

Nanomaterials (Jul 2020)

Improved Charge Transfer Contribution by Cosputtering Ag and ZnO

Bingbing Han,
Shuang Guo,
Sila Jin,
Eungyeong Park,
Xiangxin Xue,
Lei Chen,
Young Mee Jung

Affiliations

Bingbing Han: Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
Shuang Guo: Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
Sila Jin: Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
Eungyeong Park: Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
Xiangxin Xue: Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
Lei Chen: Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
Young Mee Jung: Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea

DOI: https://doi.org/10.3390/nano10081455
Journal volume & issue: Vol. 10, no. 8
p. 1455

Abstract

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A two-dimensional polystyrene microsphere array cosputtered with Ag and ZnO was designed for evaluating surface-enhanced Raman scattering (SERS) activity. The surface plasmon resonance (SPR) and SERS properties were significantly changed by the introduction of ZnO into the Ag film. By increasing the Ag sputtering power, a redshift of the SPR peak was obtained. Moreover, improved SERS activity occurred because of the electromagnetic (EM) contribution from the increasing Ag content and the charge transfer (CT) contribution from the introduction of ZnO. More importantly, the Hall effect was employed to evaluate the carrier density effect on the SERS contribution of the Ag/ZnO film. The increase in the carrier density as the Ag sputtering power increased indicated an increasing number of free electrons stored in the Ag/ZnO film, which was accompanied by improved EM and CT contributions.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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