Communications Physics (Nov 2023)

Large anomalous Hall effect and negative magnetoresistance in half-topological semimetals

  • Yanglin Zhu,
  • Cheng-Yi Huang,
  • Yu Wang,
  • David Graf,
  • Hsin Lin,
  • Seng Huat Lee,
  • John Singleton,
  • Lujin Min,
  • Johanna C. Palmstrom,
  • Arun Bansil,
  • Bahadur Singh,
  • Zhiqiang Mao

DOI
https://doi.org/10.1038/s42005-023-01469-6
Journal volume & issue
Vol. 6, no. 1
pp. 1 – 9

Abstract

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Abstract Proposed mechanisms for large intrinsic anomalous Hall effect (AHE) in magnetic topological semimetals include diverging Berry curvatures of Weyl nodes, anticrossing nodal rings or points of non-trivial bands. Here we demonstrate that a half-topological semimetal (HTS) state near a topological critical point can provide an alternative mechanism for a large AHE via systematic studies on an antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observe a large AHE with tanΘH ≈ 2 in its field-driven ferromagnetic (FM) phase, but also find a distinct Hall resistivity peak in its canted AFM phase. Moreover, we observe a large negative magnetoresistance with a value of ~98%. Our in-depth theoretical modelling indicates that these exotic transport properties originate from the HTS state which exhibits Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands. Our study offers alternative strategies for improved materials design for spintronics and other applications.