Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals

Z.-S. Feng; Z.-H. Kang; X.-M. Li; Zeng-Bin Wang; J.-Y. Gao; Yu. M. Andreev; V. V. Atuchin; K. A. Kokh; G. V. Lanskii; A. I. Potekaev; A. V. Shaiduko; V. A. Svetlichnyi

doi:10.1063/1.4868626

AIP Advances (Mar 2014)

Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals

Z.-S. Feng,
Z.-H. Kang,
X.-M. Li,
Zeng-Bin Wang,
J.-Y. Gao,
Yu. M. Andreev,
V. V. Atuchin,
K. A. Kokh,
G. V. Lanskii,
A. I. Potekaev,
A. V. Shaiduko,
V. A. Svetlichnyi

Affiliations

Z.-S. Feng: Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, China
Z.-H. Kang: Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, China
X.-M. Li: Aviation University of Air Force, 2222 Nanhu Rd., Changchun 130022, China
Zeng-Bin Wang: Quantum Engineering Center, Beijing Institute of Control Devices, Beijing 100854, China
J.-Y. Gao: Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, China
Yu. M. Andreev: Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia
V. V. Atuchin: Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, 13 Lavrentiev Ave., Novosibirsk, 630090, Russia
K. A. Kokh: Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russia
G. V. Lanskii: Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia
A. I. Potekaev: Siberian Physical-Technical Institute of the Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, Russia
A. V. Shaiduko: Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia
V. A. Svetlichnyi: Siberian Physical-Technical Institute of the Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, Russia

DOI: https://doi.org/10.1063/1.4868626
Journal volume & issue: Vol. 4, no. 3
pp. 037104 – 037104-6

Abstract

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The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been demonstrated. The multiphoton absorption and thermal effect have been identified as key factors limiting fs and ns pulse pump intensities, respectively. High advantages in the limit pump intensity as up to 50% for optimally indium-doped crystal and up to 4.5 times for optimally sulfur-doped crystal have been demonstrated under fs pulses expose.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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