Triply degenerate semimetal PtBi2 as van der Waals contact interlayer in two-dimensional transistor

Abstract

The low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple-degenerate semi-metal is mostly confined to the stage of physical properties and theoretical analysis, there are still challenges in its practical application. This research showcases the first application of the triply degenerate semimetal PtBi _2 in electronic devices. Leveraging a van der Waals transfer method, PtBi _2 flakes were used as interlayer contacts for metal electrodes and WS _2 in transistors. The transistor achieved a switching ratio above 10 ^6 and average mobility can reach 85 cm ^2 V ^−1 s ^−1 , meeting integrated circuit requirements. Notably, the excellent air stability of PtBi _2 simplifies the device preparation process and provides more stable device performance. Transfer process reduces the Schottky barrier between metal electrodes and semiconductors while avoiding Fermi pinning during metal deposition to achieve excellent contact. This groundbreaking work demonstrates the practical applicability of PtBi _2 in the field of electronic devices while opening new avenues for the integration of novel materials in semiconductor technology, setting a precedent for future innovations.

Keywords

• triply degenerate semimetal
• PtBi2
• vdW contact
• transistor