Molecular beam epitaxial In2Te3 electronic devices

Imhwan Kim; Jinseok Ryu; Eunsu Lee; Sangmin Lee; Seokje Lee; Wonwoo Suh; Jamin Lee; Miyoung Kim; Hong seok Oh; Gyu-Chul Yi

doi:10.1038/s41427-024-00578-0

NPG Asia Materials (Nov 2024)

Molecular beam epitaxial In2Te3 electronic devices

Imhwan Kim,
Jinseok Ryu,
Eunsu Lee,
Sangmin Lee,
Seokje Lee,
Wonwoo Suh,
Jamin Lee,
Miyoung Kim,
Hong seok Oh,
Gyu-Chul Yi

Affiliations

Imhwan Kim: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University
Jinseok Ryu: Department of Material Science Engineering and Research Institute of Advanced Materials, Seoul National University
Eunsu Lee: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University
Sangmin Lee: Department of Material Science Engineering and Research Institute of Advanced Materials, Seoul National University
Seokje Lee: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University
Wonwoo Suh: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University
Jamin Lee: Interdisciplinary Program in Neuroscience, College of Science, Seoul National University
Miyoung Kim: Department of Material Science Engineering and Research Institute of Advanced Materials, Seoul National University
Hong seok Oh: Department of Physics and Department of Intelligent Semiconductors, Soongsil University
Gyu-Chul Yi: Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University

DOI: https://doi.org/10.1038/s41427-024-00578-0
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 6

Abstract

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Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In2Te3 and h-BN substrates. Compared with the previously reported In2Te3 FETs, the MBE-grown In2Te3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm2 V−1 s−1, a subthreshold swing close to 6 V dec−1, and an impressive on/off ratio of approximately 105. Furthermore, the Ti/In2Te3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV.

Published in NPG Asia Materials

ISSN: 1884-4057 (Online)
Publisher: Nature Portfolio
Country of publisher: Japan
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology: Biotechnology
Website: https://www.nature.com/am/

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