Temperature dependence of width band gap in Inxga1-Xasquantum well in presence of transverse strong magnetic field

Erkaboev U. I.; Sayidov N. A.; Negmatov U. M.; Rakhimov R. G.; Mirzaev J. I.

doi:10.1051/e3sconf/202340104042

E3S Web of Conferences (Jan 2023)

Temperature dependence of width band gap in Inxga1-Xasquantum well in presence of transverse strong magnetic field

Erkaboev U. I.,
Sayidov N. A.,
Negmatov U. M.,
Rakhimov R. G.,
Mirzaev J. I.

Affiliations

Erkaboev U. I.: Namangan Institute of Engineering and Technology
Sayidov N. A.: Namangan Institute of Engineering and Technology
Negmatov U. M.: Namangan Institute of Engineering and Technology
Rakhimov R. G.: Namangan Institute of Engineering and Technology
Mirzaev J. I.: Namangan Institute of Engineering and Technology

DOI: https://doi.org/10.1051/e3sconf/202340104042
Journal volume & issue: Vol. 401
p. 04042

Abstract

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This article investigated the temperature dependence of the width band gap in InxGa1-xAs quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/InxGa1-xAs heterostructures based on a InxGa1-xAs quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures.

Published in E3S Web of Conferences

ISSN: 2267-1242 (Online)
Publisher: EDP Sciences
Country of publisher: France
LCC subjects: Geography. Anthropology. Recreation: Environmental sciences
Website: http://www.e3s-conferences.org/

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