The influence of low energy argon ion irradiation on generation of electrically active defects in silicon

Abstract

The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface.

Keywords

• electrically active defects
• silicon
• ion irradiation
• scanning electron microscopy
• photosensitivity
• Schottky diodes