MIS Transistor with Integrated Waveguide for Electrophotonics and the Effect of Channel Length in Light Detection

Abstract

In this work, we study the optical response of MOS-like transistors with a Si3N4 integrated waveguide which serves also as the dielectric of the gate, and P-type substrate with 1´1012 cm-3 acceptor concentration and different channel length. Simulation results show the possibility to integrate this kind of MIS transistor as detectors in an electrophotonic circuit compatible with CMOS fabrication process and obtaining electrical gain for low power light signals (below 400 nW).

Keywords

• electrophotonics
• integrated photonics
• planar waveguide
• si photonics