Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Yu-Jin Hwang; Do-Kyung Kim; Sang-Hwa Jeon; Ziyuan Wang; Jaehoon Park; Sin-Hyung Lee; Jaewon Jang; In Man Kang; Jin-Hyuk Bae

doi:10.3390/nano12183097

Nanomaterials (Sep 2022)

Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Yu-Jin Hwang,
Do-Kyung Kim,
Sang-Hwa Jeon,
Ziyuan Wang,
Jaehoon Park,
Sin-Hyung Lee,
Jaewon Jang,
In Man Kang,
Jin-Hyuk Bae

Affiliations

Yu-Jin Hwang: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
Do-Kyung Kim: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
Sang-Hwa Jeon: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
Ziyuan Wang: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
Jaehoon Park: Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
Sin-Hyung Lee: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
Jaewon Jang: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
In Man Kang: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea
Jin-Hyuk Bae: School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea

DOI: https://doi.org/10.3390/nano12183097
Journal volume & issue: Vol. 12, no. 18
p. 3097

Abstract

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Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (VO) increased from 21.5% to 38.2%. According to increased VO, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm2 V−1 s−1. In addition, we found that the threshold voltage negatively shifted from 3.08 to −0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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