Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation

Abstract

Abstract Methods to encode digital data items as strands of synthetic DNA followed by selective data retrieval have been demonstrated. However, these initially bio‐oriented processes remain slow and not optimized. DNA field‐effect transistor (DNA‐FET) is studied here as a possible random‐access memory (RAM) device for simple, selective and rapid ssDNA fragment retrieval used as data pool identifier. The DNA‐FET is based on a co‐planar Au‐gated fully organic transistor appended with short single‐stranded DNA (ssDNA) probes bearing a blocking molecule to prevent partial hybridization and achieve near perfect selectivity for short length ssDNA (up to 45 nt). Examination of transconductance of the novel active layer incorporating a DNA nanopore architecture reveals enhanced binding site accessibility. This, in turn, facilitates discriminatory hybridization, particularly in the physical retrieval of short‐length ssDNA from a competitive, concentrated ssDNA background pool consisting of nine different sequences, with at least one nucleotide difference. The DNA‐FET exhibits rapid operation (9 min) in the millivolt range, low detection limit (sub‐femtomolar), high selectivity and reusability. Considering the straightforward concept, near error‐free identification capacity and hypothetically outstanding scalability, the DNA‐FET described here has potential as a foundation for further exploration of advanced RAM technology in the DNA data storage process.

Keywords

• DNA data storage
• DNA field‐effect transistors
• nanoporous DNA layer
• random‐access memory