Moldavian Journal of the Physical Sciences (Dec 2005)

New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

  • Rusu, Emil

Journal volume & issue
Vol. 4, no. 4
pp. 481 – 484

Abstract

Read online

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated