AIP Advances (Jun 2012)

Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

  • F. de Moure-Flores,
  • J. G. Quiñones-Galván,
  • A. Guillén-Cervantes,
  • J. Santoyo-Salazar,
  • A. Hernández-Hernández,
  • M. de la L. Olvera,
  • M. Zapata-Torres,
  • M. Meléndez-Lira

DOI
https://doi.org/10.1063/1.4721275
Journal volume & issue
Vol. 2, no. 2
pp. 022131 – 022131-6

Abstract

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Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.