Nature Communications (Aug 2018)
A gate-free monolayer WSe2 pn diode
- Jhih-Wei Chen,
- Shun-Tsung Lo,
- Sheng-Chin Ho,
- Sheng-Shong Wong,
- Thi-Hai-Yen Vu,
- Xin-Quan Zhang,
- Yi-De Liu,
- Yu-You Chiou,
- Yu-Xun Chen,
- Jan-Chi Yang,
- Yi-Chun Chen,
- Ying-Hao Chu,
- Yi-Hsien Lee,
- Chung-Jen Chung,
- Tse-Ming Chen,
- Chia-Hao Chen,
- Chung-Lin Wu
Affiliations
- Jhih-Wei Chen
- Department of Physics, National Cheng Kung University
- Shun-Tsung Lo
- Department of Physics, National Cheng Kung University
- Sheng-Chin Ho
- Department of Physics, National Cheng Kung University
- Sheng-Shong Wong
- Department of Physics, National Cheng Kung University
- Thi-Hai-Yen Vu
- Department of Physics, National Cheng Kung University
- Xin-Quan Zhang
- Department of Materials Science and Engineering, National Tsing Hua University
- Yi-De Liu
- Department of Physics, National Cheng Kung University
- Yu-You Chiou
- Department of Physics, National Cheng Kung University
- Yu-Xun Chen
- Department of Electrophysics, National Chiao Tung University
- Jan-Chi Yang
- Department of Physics, National Cheng Kung University
- Yi-Chun Chen
- Department of Physics, National Cheng Kung University
- Ying-Hao Chu
- Department of Materials Science and Engineering, National Chiao Tung University
- Yi-Hsien Lee
- Department of Materials Science and Engineering, National Tsing Hua University
- Chung-Jen Chung
- Center for Micro/Nano Science and Technology, National Cheng Kung University
- Tse-Ming Chen
- Department of Physics, National Cheng Kung University
- Chia-Hao Chen
- National Synchrotron Radiation Research Center (NSRRC)
- Chung-Lin Wu
- Department of Physics, National Cheng Kung University
- DOI
- https://doi.org/10.1038/s41467-018-05326-x
- Journal volume & issue
-
Vol. 9,
no. 1
pp. 1 – 7
Abstract
Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.
